Method for predicting contributions of silicon interstitials to n-type dopant transient enhanced diffusion during a pn junction formation
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United States of America Patent
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Jul 13, 2010
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Mar 29, 2007
app pub date -
Sep 29, 2006
filing date -
Sep 29, 2005
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Abstract
A method for predicting the contribution of silicon interstitials to n-type dopant transient enhanced diffusion during a pn junction formation is disclosed. Initially, fundamental data for a set of microscopic processes that can occur during one or more material processing operations are obtained. The fundamental data are then utilized to build kinetic models for a set of reactions that contribute substantially to an evolution of n-type dopant concentration and electrical activities. The kinetic models are subsequently applied to a simulator to predict temporal and spatial evolutions of concentration and electrical activity profiles of the n-type dopants.
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