Ion implantation apparatus and method of converging/shaping ion beam used therefor
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United States of America Patent
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Jul 13, 2010
Grant Date -
Oct 16, 2008
app pub date -
Apr 10, 2008
filing date -
Apr 10, 2007
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Abstract
An ion implantation apparatus reciprocally scans an ion beam extracted from an ion source and passed through a mass analysis magnet apparatus and a mass analysis slit and irradiates to a wafer. The ion beam is converged and shaped by providing a first quadrupole vertical focusing electromagnet at a section of a beam line from an outlet of the mass analysis magnet apparatus before incidence of the mass analysis slit and providing a second quadrupole vertical focusing electromagnet having an effective magnetic field effect larger than that of the first quadrupole focusing electromagnet at a section of the beam line from an outlet of the mass analysis slit before incidence on the beam scanner.
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