Cleaning processes for silicon carbide materials
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United States of America Patent
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Jul 13, 2010
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app pub date -
Oct 28, 2003
filing date -
Oct 28, 2003
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Abstract
The cleaning of silicon carbide materials on a large-scale is described. Certain silicon carbide materials in the form of wafer-lift pins, wafer-rings and/or wafer-showerheads are cleaned by using a combination of two of more of the following steps, comprising: high temperature oxidation, scrubbing, ultrasonic assisted etching in an aqueous acid solution, ultrasonication in deionized water, immersion in an aqueous acid solution, and high temperature baking. The silicon carbide materials may either be sintered or formed by chemical vapor deposition.
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