Apparatus for production of crystal of group III element nitride and process for producing crystal of group III element nitride
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United States of America Patent
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Jul 13, 2010
Grant Date -
Sep 4, 2008
app pub date -
Apr 14, 2008
filing date -
Apr 27, 2004
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Abstract
A method for manufacturing Group III nitride crystals with high quality is provided. By the method, a crystal raw material solution and gas containing nitrogen are introduced into a reactor vessel, which is heated, and crystals are grown in an atmosphere of pressure applied thereto. The gas is introduced from a gas supplying device to the reactor vessel through a gas inlet of the reactor vessel, and then is exhausted to the inside of a pressure-resistant vessel through a gas outlet of the reactor vessel. Since the gas is introduced directly to the reactor vessel, impurities attached to the pressure-resistant vessel and the like into the crystal growing site can be prevented. Further, the gas flows through the reactor vessel, to suppress aggregation of an evaporating alkali metal, etc., at the gas inlet and reduce flow of the metal vapor into the gas supplying device.
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