Semiconductor device and method of fabricating the same
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United States of America Patent
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Jul 6, 2010
Grant Date -
Jul 2, 2009
app pub date -
Dec 8, 2008
filing date -
Dec 27, 2007
priority date (Note) -
Expired
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Abstract
Disclosed are a semiconductor device and method of fabricating the same. The semiconductor device includes a floating gate on a semiconductor layer; a first contact on the floating gate; a MIM capacitor including a lower electrode, an insulating layer, and an upper electrode on the first contact; a second contact on a drain region of the semiconductor layer; a metal island on the second contact; a via on the metal island; and a bit line on the via.
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