Light emitting element structure using nitride bulk single crystal layer
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United States of America Patent
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Jul 6, 2010
Grant Date -
Dec 16, 2004
app pub date -
Oct 28, 2002
filing date -
Oct 26, 2001
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Abstract
The object of this invention is to provide a high-output type nitride light emitting device.or less, and A-plane or M-plane which is parallel to C-axis of hexagonal structure for an epitaxial face, wherein the n-type semiconductor layer or layers are formed directly on the A-plane or M-plane.N (0≦x≦1) can be formed at a low temperature not causing damage to the active layer.
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