Method of fabricating active layer of thin film transistor

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United States of America Patent

PATENT NO 7745267
APP PUB NO 20080057631A1
SERIAL NO

11614977

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Abstract

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A manufacturing method of an active layer of a thin film transistor is provided. The method includes following steps. First a substrate is provided, and a semiconductor precursor solution is then prepared through a liquid process. Thereafter, the semiconductor precursor solution is provided on the substrate to form a semiconductor precursor thin film. After that, a light source is used to irradiate the semiconductor precursor thin film to remove residual solvent and allow the semiconductor precursor thin film to produce semiconductor property, so as to form a semiconductor active layer.

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Patent Owner(s)

Patent OwnerAddress
INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTENO 195 SEC 4 CHUNG HSING RD CHUTUNG HSINCHU 31040
AU OPTRONICS CORPORATIONNO 1 LI-HSIN RD II SCIENCE-BASED INDUSTRIAL PARK HSINCHU
HANNSTAR DISPLAY CORPORATION4F NO 15 LN 168 XINGSHAN RD NEIHU DIST TAIPEI CITY 114762
CHUNGHWA PICTURE TUBES LTDNO 1 HUAYING RD LONGTAN DIST TAOYUAN CITY 325
CHI MEI OPTOELECTRONICS CORPORATIONTAIWAN 74147
TAIWAN TFT LCD ASSOCIATIONHSINCHU
TPO DISPLAYS CORPMIAO-LI COUNTY

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Cheng, Hsiang-Yuan Taipei, TW 16 71
Chiang, Shin-Chuan Taipei, TW 12 49
Chuang, Bor-Chuan Tainan County, TW 6 37
Lai, Shih-Hsiang Taipei County, TW 4 35
Yu, Chin-Chih Hsinchu, TW 3 32

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