Bulk monocrystalline gallium nitride

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 7744697
APP PUB NO 20040089221A1
SERIAL NO

10682891

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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The present invention refers to an ammonobasic method for preparing a gallium-containing nitride crystal, in which gallium-containing feedstock is crystallized on at least one crystallization seed in the presence of an alkali metal-containing component in a supercritical nitrogen-containing solvent. The method can provide monocrystalline gallium-containing nitride crystals having a very high quality.

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Patent Owner(s)

Patent OwnerAddress
NICHIA CORPORATION491-100 OKA KAMINAKA-CHO ANAN-SHI TOKUSHIMA 774-8601
AMMONO SP Z O O00-377 WARSAW

International Classification(s)

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  • 2003 Application Filing Year
  • C30B Class
  • 443 Applications Filed
  • 187 Patents Issued To-Date
  • 42.22 % Issued To-Date
Click to zoom InYear of Issuance% of Matters IssuedCumulative IssuancesYearly Issuances2003200420052006200720082009201020112012201320140255075100

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Doradziński, Roman Marek Warsaw, PL 1 0
Dwiliński, Robert Tomasz Warsaw, PL 1 0
Garczyński, Jerzy Lomianki, PL 1 0
Kanbara, Yasuo Anan, JP 28 1468
Sierzputowski, Leszek Piotr Union, US 4 287

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  • C30B Class
  • 0 % this patent is cited more than
  • 15 Age
Citation count rangeNumber of patents cited in rangeNumber of patents cited in various citation count ranges1074209431411101 - 1011 - 2021 - 3031 - 4041 - 5051 - 6061 - 7081 - 9091 - 100100 +05101520253035404550556065707580

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