Manufacturing method for variable resistive element
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United States of America Patent
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Jun 29, 2010
Grant Date -
Dec 14, 2006
app pub date -
Jun 6, 2006
filing date -
Jun 10, 2005
priority date (Note) -
Expired
status (Latency Note)
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Abstract
In the case where a variable resistive element, which is made of a variable resistor provided between a first and second electrodes, and of which the electrical resistance varies by applying a voltage pulse between the two electrodes, is applied to a resistance nonvolatile memory, there is a range of the resistance value of the variable resistive element in a low resistance state where the nonvolatile memory can operate normally. In the conventional manufacturing method the resistance value of the variable resistive element is too low, therefore, it can not be controlled within a desired range of the resistance value. A step of carrying out of a reduction process is provided at any point after the step of forming a variable resistor material as a film, it has thereby become possible to increase the resistance value of the variable resistive element, which is too low in the conventional method.
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