Memory device, data recording method, and IC tag
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United States of America Patent
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Jun 22, 2010
Grant Date -
Nov 27, 2008
app pub date -
May 20, 2008
filing date -
May 23, 2007
priority date (Note) -
Expired
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Abstract
A memory device includes first electrodes, second electrodes, third electrodes, heaters, and memory cells between the first electrodes and the heaters. Each third electrode is provided on the heaters, and each second electrode is provided at a side portion of the heaters. Each memory cell contains an electroconductive liquid crystal compound having a long linear conjugate structure and exhibiting a smectic phase as a liquid crystal phase. Information can be written in the memory cells by selectively heating the heaters to cause the corresponding memory cells to have both electroconductivity and optical anisotropy.
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