Method for fabricating semiconductor device
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United States of America Patent
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-
Jun 22, 2010
Grant Date -
Dec 4, 2008
app pub date -
Mar 31, 2008
filing date -
May 28, 2007
priority date (Note) -
Expired
status (Latency Note)
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Abstract
After a first insulating film is formed on a substrate, a wiring groove is formed in the first insulating film, and then a wire is formed inside the wiring groove. Subsequently, a protection film is formed on the first insulating film and on the wire, and then a hard mask film is formed on the protection film. After that, the hard mask film is patterned. Subsequently, the protection film and the first insulating film are partially removed using the patterned hard mask film to form an air gap groove, and then a second insulating film is formed to close an upper portion of the air gap groove for forming an air gap.
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