SOI structure having a SiGe layer interposed between the silicon and the insulator
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United States of America Patent
Stats
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Jun 22, 2010
Grant Date -
Mar 23, 2006
app pub date -
Nov 10, 2005
filing date -
Jan 30, 2002
priority date (Note) -
In Force
status (Latency Note)
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Abstract
A semiconductor structure and a method of manufacturing a silicon on insulator (SOI) structure having a silicon germanium (SiGe) layer interposed between the silicon and the insulator. According to one manufacturing method, a first SiGe layer, a silicon layer, and a second SiGe layer are epitaxially grown in sequence over a first substrate, and then an insulating layer is formed on the second SiGe layer. Then, impurity ions are implanted into a predetermined location of the first substrate underlying the first SiGe layer to form an impurity implantation region. A second substrate is bonded to the insulating layer on the first substrate. After the first substrate is separated along the impurity implantation region and removed, the first SiGe layer remaining on the surface of the separated region is removed so that the surface of the silicon layer may be exposed.
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- 15 United States
- 10 France
- 8 Japan
- 7 China
- 5 Korea
- 2 Other
Patent Owner(s)
Patent Owner | Address | |
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SUMITOMO MITSUBISHI SILICON CORP | TOKYO |
International Classification(s)
Inventor(s)
Inventor Name | Address | # of filed Patents | Total Citations |
---|---|---|---|
Kamiyama, Eiji | Noda, KR | 13 | 469 |
# of filed Patents : 13 Total Citations : 469 | |||
Lee, Gonsub | Seoul, KR | 4 | 146 |
# of filed Patents : 4 Total Citations : 146 | |||
Park, Jeagun | Sungnam, KR | 5 | 148 |
# of filed Patents : 5 Total Citations : 148 | |||
Tomizawa, Kenji | Noda, KR | 39 | 587 |
# of filed Patents : 39 Total Citations : 587 |
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Patent Citation Ranking
- 2 Citation Count
- H01L Class
- 2.46 % this patent is cited more than
- 15 Age
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Maintenance Fees
Fee | Large entity fee | small entity fee | micro entity fee | due date |
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Fee | Large entity fee | small entity fee | micro entity fee |
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Surcharge after expiration - Late payment is unavoidable | $700.00 | $350.00 | $175.00 |
Surcharge after expiration - Late payment is unintentional | $1,640.00 | $820.00 | $410.00 |
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