CMOS image sensor and method for manufacturing the same
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United States of America Patent
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Jun 15, 2010
Grant Date -
Jan 29, 2009
app pub date -
Sep 23, 2008
filing date -
Dec 30, 2004
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Abstract
A CMOS image sensor and a method for manufacturing the same improve light-receiving efficiency and maintain a margin in the design of a metal line. The CMOS image sensor includes a transparent substrate including an active area having a photodiode region and a transistor region and a field area for isolation of the active area, a p-type semiconductor layer on the transparent substrate, a photodiode in the p-type semiconductor layer corresponding to the photodiode region, and a plurality of transistors in the p-type semiconductor layer corresponding to the transistor region.
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