Method of forming amorphous TiN by thermal chemical vapor deposition (CVD)
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United States of America Patent
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Jun 8, 2010
Grant Date -
Dec 15, 2005
app pub date -
Jun 3, 2005
filing date -
Jun 14, 2004
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Abstract
on a heated substrate surface. Experimental results show that we have modified the precursor in such a way to reduce gas phase component of the deposition when compared to the unmodified TDEAT-NH3 reaction. Deposition temperatures were the range of 250-450° C. and under a range of process conditions the modified precursor shows improvements in coating conformality, a reduction in resistivity and an amorphous structure, as shown by TEM and XRD analysis. SIMS and scanning AES have shown that the film is essentially stoichiometric in Ti:N ratio and contains low levels of C (˜0.4 at %) and trace levels of incorporated Si (0.01
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