Semiconductor device and method of fabricating the same

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United States of America Patent

PATENT NO 7732257
APP PUB NO 20080122004A1
SERIAL NO

11926147

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Abstract

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A semiconductor device and a fabricating method thereof are provided. The semiconductor device can include a first chip having transistors of only the NMOS type, a second chip having transistors of only the PMOS type, and an interconnection electrically connecting the first and second chips to each other. By forming NMOS and PMOS transistors on separate chips, the total number of implant photo processes can be decreased, thereby reducing the fabrication cost.

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Patent Owner(s)

Patent OwnerAddress
DSS TECHNOLOGY MANAGEMENT INC1650 TYSON?S CORNER SUITE 1580 TYSON?S CORNER VA 22102

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Park, Jin Ha Echeon-si, KR 17 23

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