Semiconductor device in which GaN-based semiconductor layer is selectively formed
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United States of America Patent
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Jun 1, 2010
Grant Date -
Oct 5, 2006
app pub date -
Mar 30, 2006
filing date -
Mar 31, 2005
priority date (Note) -
Expired
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Abstract
A semiconductor device includes a mask layer having openings on a substrate, a GaN-based semiconductor layer selectively formed on the substrate with the mask layer that serves as a mask, a gate electrode and either a source electrode or an emitter electrode formed on the GaN-based semiconductor layer, and a drain electrode or a collector electrode connected on a surface of the first semiconductor layer that faces the GaN-based semiconductor layer or an opposite side of the first semiconductor layer.
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