Method of making segmented contacts for radiation detectors using direct photolithography
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United States of America Patent
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Jun 1, 2010
Grant Date -
Aug 23, 2007
app pub date -
Dec 4, 2006
filing date -
Feb 22, 2006
priority date (Note) -
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Abstract
A method is provided for fabricating contacts on semiconductor substrates by direct lithography that results in durable adhesion of the electrodes, increased interpixel resistance and the electrodes which act as a blocking contact, thereby providing for improved energy resolution in a resultant radiation detector.
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