Capacitor device of a semiconductor
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United States of America Patent
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May 25, 2010
Grant Date -
Jun 7, 2007
app pub date -
Dec 1, 2006
filing date -
Dec 5, 2005
priority date (Note) -
Expired
status (Latency Note)
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Abstract
Embodiments relate to a capacitor having a high capacitance, a semiconductor device having the same, and a method for manufacturing the semiconductor device. In embodiments, the capacitor may include a lower electrode having a predetermined pattern, a dielectric layer formed on the lower electrode, and an upper electrode formed on the dielectric layer.
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