Phase change memory device
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United States of America Patent
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May 25, 2010
Grant Date -
Jul 19, 2007
app pub date -
Dec 27, 2006
filing date -
Dec 29, 2005
priority date (Note) -
Expired
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Abstract
There is provided a semiconductor device. The semiconductor device includes a lower electrode, a contact connected to the lower electrode to have a double trench structure, a phase change material layer accommodated in the double trench to cause a phase change between a crystalline state and an amorphous state in accordance with a change in heat transmitted by the contact, and an upper electrode connected to the phase change material layer.
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