Phototransistor with source layer between barrier layer and photosensitive semiconductor layer and a gate layer for controlling the barrier height of the barrier layer
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United States of America Patent
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May 25, 2010
Grant Date -
Aug 20, 2009
app pub date -
Jan 21, 2005
filing date -
Jan 24, 2004
priority date (Note) -
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Abstract
A photo transistor has an active region spaced from a source by barrier. A drain is laterally spaced from the active region. Light incident on the active region creates electron-hole pairs. Holes accumulate at the barrier and modulate the effective barrier height to electrons. A gate reset voltage then is applied to gate which lower the barrier allowing the holes to escape.
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