Method for selective CMP of polysilicon
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United States of America Patent
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May 25, 2010
Grant Date -
May 22, 2008
app pub date -
Nov 22, 2006
filing date -
Nov 22, 2006
priority date (Note) -
Expired
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Abstract
A method of removing polysilicon in preference to silicon dioxide and/or silicon nitride by chemical mechanical polishing. The method removes polysilicon from a surface at a high removal rate while maintaining a high selectivity of polysilicon to silicon dioxide and/or a polysilicon to silicon nitride. The method is particularly suitable for use in the fabrication of MEMS devices.
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