Method of manufacturing a semiconductor device
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United States of America Patent
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May 25, 2010
Grant Date -
Jul 12, 2007
app pub date -
Dec 28, 2006
filing date -
Dec 29, 2005
priority date (Note) -
Expired
status (Latency Note)
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Abstract
Disclosed are a semiconductor device having a vertical trench gate structure to improve the integration degree and a method of manufacturing the same. The semiconductor device includes an epitaxial layer having a second conductive type on a first conductive type substrate having an active region and an isolation region, a trench in the isolation region, a first conductive type first region in the epitaxial layer at opposite side portions of the trench, an isolation layer at a predetermined depth in the trench, a gate insulation layer along upper side portions of the trench, a gate electrode in an upper portion of the trench, a body region in the active region, a source electrode on the body region, a source region in an upper portion of the body region at opposite side portions of the gate electrode, and a drain electrode at a rear surface of the substrate.
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