Diode with improved switching speed
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United States of America Patent
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May 18, 2010
Grant Date -
Jan 1, 2004
app pub date -
Jun 28, 2002
filing date -
Jun 28, 2002
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A diode having a first semiconductor region of a first polarity and a second semiconductor region of an opposite polarity at least partially surrounding the first semiconductor region. A metal contact coupled to the second semiconductor region at least partially surrounding the first semiconductor region. The diode offers improvements in switching speed.
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