Method to remove resist, etch residue, and copper oxide from substrates having copper and low-k dielectric material
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United States of America Patent
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May 18, 2010
Grant Date -
Sep 7, 2006
app pub date -
Feb 24, 2006
filing date -
Feb 25, 2005
priority date (Note) -
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Abstract
A variety of compositions that are particularly applicable for removing one or more of resist, etching residue, planarization residue, and copper oxide from a substrate comprising copper and a low-k dielectric material are described. The resist, residues, and copper oxide are removed by contacting the substrate surface with the composition, typically for a period of 30 seconds to 30 minutes, and at a temperature between 25° and 45° C. The composition includes a fluoride-providing component; at least 1% by weight of a water miscible organic solvent; an organic acid; and at least 81% by weight water. Typically the composition further includes up to about 0.4% of one or more chelators.
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