Field effect transistor comprising compound semiconductor
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United States of America Patent
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Apr 27, 2010
Grant Date -
Apr 5, 2007
app pub date -
Sep 28, 2006
filing date -
Sep 30, 2005
priority date (Note) -
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Abstract
A field effect transistor having a double recess structure, which minimizes an influence exerted on a channel region depending upon the surface state of an outer recess section. In the field effect transistor having such a double recess structure, an ohmic contact layer at the surface of the outer recess section is made to have a thickness so as to be in a to completely depleted state.
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