Semiconductor light-emitting device with electrode for N-polar InGaAIN surface
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United States of America Patent
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Apr 27, 2010
Grant Date -
Sep 25, 2008
app pub date -
Oct 26, 2006
filing date -
Oct 27, 2005
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Abstract
One embodiment of the present invention provides a semiconductor light-emitting device. The semiconductor light-emitting device includes a substrate, a p-type doped InGaAIN layer, an n-type doped InGaAIN layer, and an active layer situated between the p-type doped and n-type doped InGaAIN layers. The semiconductor light-emitting device further includes an n-side Ohmic-contact layer coupled to an N-polar surface of the n-type doped InGaAIN layer. The Ohmic-contact layer comprises at least one of Au, Ni, and Pt, and at least one of group IV elements.
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