Inverted-pyramidal photonic crystal light emitting device
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United States of America Patent
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Apr 20, 2010
Grant Date -
May 29, 2008
app pub date -
Nov 28, 2006
filing date -
Nov 28, 2006
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Abstract
A light-emitting device (LED) is described which exhibits high extraction efficiency and an emission profile which is substantially more directional than from a Lambertian source. The device comprises a light generating layer disposed between first and second layers of semiconductor material, each having a different type of doping. An upper surface of the first layer has a tiling arrangement of inverted pyramidal or inverted frustro-pyramidal indentations in the semiconductor material filled by a material of different refractive index and which together comprise a photonic band structure. The indentations and their tiling arrangement are configured for efficient extraction of light from the device via the upper surface of the first layer and in a beam that is substantially more directional than from a Lambertian source. An enhanced device employs a reflector beneath the second layer to utilise the microcavity effect. A method for fabricating the device is also described which employs anisotropic wet etching to produce the inverted pyramidal or inverted frustro-pyramidal indentations.
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