Semiconductor device
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United States of America Patent
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Apr 13, 2010
Issued Date -
N/A
app pub date -
Feb 18, 2009
filing date -
Feb 4, 2005
priority date (Note) -
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Abstract
A semiconductor device having a bipolar transistor improved with heat dissipation. A semiconductor device having bipolar transistors formed in a plurality of device forming regions electrically isolated from each other by device isolation trenches traversing the semiconductor layer, in which a device isolation trench for each of unit bipolar transistors connected in parallel is removed and the plurality of unit bipolar transistors connected in series are entirely surrounded with one device isolation trench.
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