Indium nitride layer production
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United States of America Patent
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Apr 13, 2010
Grant Date -
Nov 22, 2007
app pub date -
Sep 14, 2005
filing date -
Sep 16, 2004
priority date (Note) -
Expired
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Abstract
The invention relates to a structure usable in electronic, optical or optoelectronic engineering which comprises a substantially crystalline layer made of an alloy consisting of at least one element of the column II of the periodic elements system and/or at least one element of the column IV of the periodic elements system and of N.sub.2 (said alloy being noted N-IV-N.sub.2), wherein said structure also comprises an InN layer. A method for producing an indium nitride layer, a substrate forming plate and the use thereof for indium nitride growth are also disclosed.
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