CMOS image sensor having double gate insulator therein and method for manufacturing the same
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United States of America Patent
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Apr 6, 2010
Grant Date -
May 31, 2007
app pub date -
Jan 24, 2007
filing date -
Apr 30, 2003
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A method for manufacturing a CMOS image sensor includes: preparing a semiconductor substrate incorporating therein a p-type epitaxial layer by epitaxially growing up an upper portion of the semiconductor substrate; forming a pixel array in one predetermined location of the semiconductor substrate, the pixel array having a plurality of transistors and a photodiode therein, wherein each transistor employs a gate insulator with a thickness ranging from 40 Å to 90 Å; and forming a logic circuit in the other predetermined location of the semiconductor substrate, the logic circuit having at least one transistor, wherein the transistor employs a gate insulator with a thickness ranging from 5 Å to 40 Å.
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