Method of forming epitaxial SiC using XPS characterization

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Mar 16, 2010
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May 3, 2007
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Oct 26, 2006
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Oct 27, 2005

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(y<1) (in the region of 284.5 eV), as measured by an X-ray photoelectron spectroscopic analyzer (XPS).

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Patent Owner	Address
TOYOTA JIDOSHA KABUSHIKI KAISHA	TOYOTA-SHI
JAPAN FINE CERAMICS CENTER	NAGOYA-SHI AICHI 456-8587

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H01L:SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICE....

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Inventor Name	Address	# of filed Patents	Total Citations
Seki, Akinori	Shizuoka-ken, JP	28	224
Shibata, Noriyoshi	Nagoya, JP	13	130
Tani, Yukari	Nagoya, JP	3	19

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Method of forming epitaxial SiC using XPS characterization

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United States of America Patent

11586680

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PATENT NO	7678671
APP PUB NO	20070096109A1
SERIAL NO	11586680
DOCKET NO

US Family Size	Non-US Coverage
Patent Longevity Expired	Forward Citations

DATE PUBLISHED	PUBLICATION/PATENT NO.	PUBLICATION TYPE
March 16, 2010	US,7678671,B2 US7678671B2	GRANTED PATENT AS SECOND PUBLICATION
May 03, 2007	US,20070096109,A1 US20070096109A1	FIRST PUBLISHED PATENT APPLICATION

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11586680

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