Light emitting diode structures

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United States of America Patent

PATENT NO 7672548
APP PUB NO 20090101931A1
SERIAL NO

12344935

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Abstract

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Light emitting diode (LED) structures are described that include a first layer and a light-generating layer, wherein light generated in the light-generating layer generally emerges from the LED structure through the upper surface of the first layer. The coupling out of light generated by spontaneous emission is enhanced by the presence of patterning in the first layer, which may take the form of an embedded photonic quasicrystal, a photonic structure comprising an amorphous array of subregions, or a zone plate structure. The invention provides the benefit of improved light extraction from the LED without undesirable far field illumination patterns.

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Patent Owner(s)

Patent OwnerAddress
QUANTUM NIL TECHNOLOGY PTE LTD138 CECIL STREET #13-02 CECIL COURT SINGAPORE 069538
QUANTUM NIL CORPORATION3F -3 NO 35 GANGU ST DATONG DIST TAIPEI CITY

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Lincoln, John Salisbury, GB 12 324
Zoorob, Majd Southampton, GB 30 1074

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