Semiconductor integrated circuit and method for manufacturing the same
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United States of America Patent
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Feb 23, 2010
Grant Date -
May 1, 2008
app pub date -
Oct 30, 2007
filing date -
Oct 31, 2006
priority date (Note) -
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Abstract
A semiconductor integrated circuit includes a power transistor formed on a semiconductor substrate, a plurality of first metal patterns and a plurality of second metal patterns which are formed right above the power transistor and function as a first electrode and as a second electrode of the power transistor, respectively, a plurality of first buses each electrically connected with, of a plurality of first metal patterns, a corresponding first metal pattern, a plurality of second buses each electrically connected with, of a plurality of second metal patterns, a corresponding second metal pattern, wherein one contact pad is provided to each of a plurality of first buses and a plurality of second buses.
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