Compound semiconductor material and method for forming an active layer of a thin film transistor device
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United States of America Patent
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Feb 23, 2010
Grant Date -
Nov 30, 2006
app pub date -
Jul 20, 2006
filing date -
Sep 18, 2003
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Abstract
A compound semiconductor material for forming an active layer of a thin film transistor device is disclosed, which has a group II-VI compound doped with a dopant ranging from 0.1 to 30 mol %, wherein the dopant is selected from a group consisting of alkaline-earth metals, group IIIA elements, group IVA elements, group VA elements, group VIA elements, and transitional metals. The method for forming an active layer of a thin film transistor device by using the compound semiconductor material of the present invention is disclosed therewith.
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