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• 15 United States
• 10 France
• 8 Japan
• 7 China
• 5 Korea
• 2 Other

Patent Owner(s)

Patent Owner	Address
CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE - CNRS-	3 RUE MICHEL ANGE PARIS 75016
UNIVERSITE PARIS NORD (PARIS XII) INSTITUT GALILEE	99 AV JEAN-BAPTISTE CLEMENT VILLETTANEUSE 93430

International Classification(s)

• H05H:PLASMA TECHNIQUE

• [Classification Symbol]

• [Patents Count]

Inventor(s)

Inventor Name	Address	# of filed Patents	Total Citations
Duten, Xavier	Paris, FR	2	7
Gicquel, Alix Hélène	Paris, FR	1	5
Hassouni, Khaled	Le Kremlin-Bicetre, FR	1	7
Lombardi, Guillaume Vincent	Rosny sur Seine, FR	1	7
Rousseau, Antoine	Paris, FR	4	22
Silva, François	Enghien, FR	1	5

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Maintenance Fees

Fee	Large entity fee	small entity fee	micro entity fee	due date

Fee	Large entity fee	small entity fee	micro entity fee
Surcharge after expiration - Late payment is unavoidable	$700.00	$350.00	$175.00
Surcharge after expiration - Late payment is unintentional	$1,640.00	$820.00	$410.00

DATE PUBLISHED	PUBLICATION/PATENT NO.	PUBLICATION TYPE
February 16, 2010	US,7662441,B2   US7662441B2	GRANTED PATENT AS SECOND PUBLICATION
July 13, 2006	US,20060153994,A1   US20060153994A1	FIRST PUBLISHED PATENT APPLICATION

Full Text

US Patent No: 7662441

High-speed diamond growth using a microwave plasma in pulsed mode

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