Semiconductor integrated circuit device enabling to produce a stable constant current even on a low power-source voltage
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United States of America Patent
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Feb 9, 2010
Grant Date -
Apr 21, 2005
app pub date -
Dec 7, 2004
filing date -
Jul 26, 2002
priority date (Note) -
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Abstract
A semiconductor integrated circuit device has a first MIS transistor of a first conductivity type, a second MIS transistor of a second conductivity type, a resistor connected in series between a first power-source line and a second power-source line, and a third MIS transistor of the first conductivity type. The third MIS transistor has a gate connected to a node where the first MIS transistor and the second MIS transistor are connected together, and a drain connected to a connection node where the second MIS transistor and the resistor are connected together.
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