Method for forming silicon thin-film on flexible metal substrate
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United States of America Patent
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Feb 9, 2010
Grant Date -
Dec 21, 2006
app pub date -
Sep 2, 2004
filing date -
Sep 2, 2003
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Abstract
Disclosed are a method for forming a silicon thin-film on a substrate, and more particularly a method for forming a polycrystalline silicon thin-film of good quality on a flexible metal substrate. A metal substrate (110) is prepared and a surface of the metal substrate (110) is flattened. An insulation film (120) is formed on the metal substrate (110). An amorphous silicon layer (130) is formed on the insulation film (120). A metal layer (140) is formed on the amorphous silicon layer (130). A sample on the metal substrate (110) is heated and crystallized.
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