Method of junction formation for CIGS photovoltaic devices
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United States of America Patent
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Jan 26, 2010
Grant Date -
Jul 6, 2006
app pub date -
Feb 24, 2006
filing date -
Nov 20, 2001
priority date (Note) -
Expired
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Abstract
Sulfur is used to improve the performance of CIGS devices prepared by the evaporation of a single source ZIS type compound to form a buffer layer on the CIGS. The sulfur may be evaporated, or contained in the ZIS type material, or both. Vacuum evaporation apparatus of many types useful in the practice of the invention are known in the art. Other methods of delivery, such as sputtering, or application of a thiourea solution, may be substituted for evaporation.
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