Strained semiconductor power device and method

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United States of America Patent

PATENT NO 7651918
SERIAL NO

11510541

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Abstract

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Si:Ge and the strained semiconductor material is substantially Si.

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Patent Owner(s)

Patent OwnerAddress
SHENZHEN XINGUODU TECHNOLOGY CO LTD17TH FLOOR JINSONG MANSION TERRA INDUSTRIAL & TRADE PARK FUTIAN SHENZHEN

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Baird, Robert W Gilbert, US 33 524
de, Frésart Edouard D Tempe, US 11 84

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