Method to fabricate gate electrodes
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United States of America Patent
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Jan 19, 2010
Grant Date -
Aug 20, 2009
app pub date -
Feb 19, 2008
filing date -
Feb 19, 2008
priority date (Note) -
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Abstract
A method for fabricating a semiconductor device comprises depositing a first layer of oxide on at least a portion of a channel of a transistor. The method further comprises depositing a layer of nitride on the first layer of oxide and etching at least a portion of the layer of nitride to the first layer of oxide. The method further comprises depositing a second layer of oxide and planarizing the oxide to expose at least a portion of the layer of nitride. The method further comprises stripping at least a portion of the layer of nitride to create one or more notches and removing at least a portion of the first layer of oxide. The method further comprises depositing a layer of polysilicon, wherein at least a portion of the layer of polysilicon is deposited into at least one of the one or more notches.
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