Semiconductor device with integrated resistive element and method of making
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United States of America Patent
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Jan 19, 2010
Grant Date -
Aug 28, 2008
app pub date -
Feb 28, 2007
filing date -
Feb 28, 2007
priority date (Note) -
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Abstract
A resistive device (44) and a transistor (42) are formed. Each uses a portion of a metal layer (18) that is formed at the same time and thus additional process steps are avoided to remove the metal from the resistive device. The metal used in the resistive device is selectively treated to increase the resistance in the resistive device. A polycrystalline semiconductor material layer (34) overlies the metal layer in the resistive device. The combination of these layers provides the resistive device. In one form the metal is treated after formation of the polycrystalline semiconductor material layer. In one form the metal treatment involves an implant of a species, such as oxygen, to increase the resistivity of the metal. Various transistor structures are formed using the untreated portion of the metal layer as a control electrode.
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