Method for fabricating a semiconductor device
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Jan 19, 2010
Grant Date -
Aug 7, 2008
app pub date -
Feb 7, 2008
filing date -
Feb 7, 2007
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A method for fabricating a semiconductor device includes: forming a dummy gate that defines a region in which a gate electrode should be formed on a semiconductor substrate; forming a surface film on the semiconductor substrate by directional sputtering vertical to a surface of the semiconductor substrate, the directional sputtering being one of collimate sputtering, long throw sputtering and ion beam sputtering; removing the surface film formed along a sidewall of the dummy gate; removing the dummy gate; and forming the gate electrode in the region from which the dummy gate on the semiconductor substrate has been removed.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully