Low-voltage organic thin film transistor and fabrication method thereof
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United States of America Patent
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Jan 19, 2010
Grant Date -
Aug 7, 2008
app pub date -
Apr 5, 2007
filing date -
Feb 6, 2007
priority date (Note) -
Expired
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Abstract
plasma process at a temperature lower than 100° C. The gate electrode is deposited with pattern on a plastic or glass substrate. An organic semiconductor layer is deposited on the gate dielectric layer, and source/drain electrodes are formed thereon. In case the dual gate dielectric layer is used, the source/drain electrodes can be disposed under the organic semiconductor layer to realize a bottom contact structure.
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