Latch structure and bit line sense amplifier structure including the same
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United States of America Patent
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Jan 12, 2010
Grant Date -
Sep 18, 2008
app pub date -
Dec 21, 2007
filing date -
Mar 13, 2007
priority date (Note) -
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Abstract
A latch structure includes a first inverter that includes a first PMOS transistor and a first NMOS transistor, and a second inverter that includes a second PMOS transistor and a second NMOS transistor, receives an output signal of the first inverter, and outputs an input signal to the first inverter. The sources of the first and second transistors of the same type are connected to a common straight source line.
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