Method of fabricating CMOS image sensor
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United States of America Patent
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Jan 12, 2010
Grant Date -
Nov 13, 2008
app pub date -
May 9, 2008
filing date -
Dec 14, 2004
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A method of fabricating a CMOS image sensor is provided, in which a trapezoidal microlens pattern profile is formed to facilitate reflowing the microlens pattern and by which a curvature of the microlens may be enhanced to raise its light-condensing efficiency. The method includes forming a plurality of photodiodes on a semiconductor substrate; forming an insulating interlayer on the semiconductor substrate including the photodiodes; forming a protective layer on the insulating interlayer; forming a plurality of color filters corresponding to the photodiodes; forming a top coating layer on the color filters; forming a microlens pattern on the top coating layer; and forming a plurality of microlenses by reflowing the microlens pattern.
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