Member for plasma etching device and method for manufacture thereof
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United States of America Patent
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Jan 12, 2010
Grant Date -
Aug 3, 2006
app pub date -
Sep 16, 2003
filing date -
Sep 16, 2003
priority date (Note) -
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Abstract
A member for a plasma etching device, comprising a coating film of yttrium oxide or YAG having a coating film thickness of 10 μm or more, a coating film thickness variance of 15% or less, preferably a surface roughness (Ra) of 1 μm or less, formed on a surface of a member, comprising quartz glass which contains 1 to 10% by weight of yttrium oxide or YAG. The member for a plasma etching device has high plasma resistance, is not subjected to an abnormal etching on the basis of a partial change of electric properties and, accordingly, can be used for a long period of time. Even when the member is large enough to handle 12-inch Si wafers, the above-described advantageous properties are maintained and the member can be used for a long period of time.
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