Method of manufacturing a silicon dioxide layer
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United States of America Patent
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Jan 12, 2010
Grant Date -
Jun 14, 2007
app pub date -
Feb 22, 2007
filing date -
Sep 16, 2004
priority date (Note) -
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Abstract
The invention relates to a of manufacturing a silicon dioxide layer of low roughness, that includes depositing a layer of silicon dioxide over a substrate by a low pressure chemical vapor deposition (LPCVD) process, the deposition process employing simultaneously a flow of tetraethylorthosilicate (TEOS) as the source material for the film deposition and a flow of a diluant gas that it not reactive with TEOS, so that the diluant gas/TEOS flow ratio is between 0.5 and 100; and annealing the silicon dioxide layer at a temperature between 600° C. and 1200° C., for a duration between 10 minutes and 6 hours.
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