Molecular memory devices including solid-state dielectric layers and related methods
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United States of America Patent
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Jan 5, 2010
Grant Date -
Jul 19, 2007
app pub date -
Nov 30, 2006
filing date -
Dec 1, 2005
priority date (Note) -
Expired
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Abstract
According to some embodiments, an article of manufacture comprises a substrate; a molecular layer on the substrate comprising at least one charge storage molecule coupled to the substrate by a molecular linker; a solid barrier dielectric layer directly on the molecular layer; and a conductive layer directly on the solid barrier dielectric layer. In some embodiments, the solid barrier dielectric layer is configured to provide a voltage drop across the molecular layer that is greater than a voltage drop across the solid barrier dielectric layer when a voltage is applied to the conductive layer. In some embodiments, the molecular layer has a thickness greater than that of the solid barrier dielectric layer. The article of manufacture contains no electrolyte between the molecular layer and the conductive layer.
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