Doped aluminum nitride crystals and methods of making them
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United States of America Patent
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Jan 5, 2010
Grant Date -
Jun 14, 2007
app pub date -
Dec 4, 2006
filing date -
Dec 2, 2005
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Abstract
Fabrication of doped AlN crystals and/or AlGaN epitaxial layers with high conductivity and mobility is accomplished by, for example, forming mixed crystals including a plurality of impurity species and electrically activating at least a portion of the crystal.
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