Nonvolatile memory with backplate
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United States of America Patent
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Dec 29, 2009
Grant Date -
Nov 20, 2008
app pub date -
May 15, 2007
filing date -
May 15, 2007
priority date (Note) -
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Abstract
The present invention provides a non-volatile memory string having serially connected dual-gate devices, in which a first gate dielectric layer adjacent a first gate electrode layer in each dual-gate device is charge-storing and in which the second gate electrode adjacent a non-charge storing gate dielectric layer are connected in common. In one implementation, the second gate electrodes of the dual-gate devices in the memory string are provided by a continuous layer of doped polysilicon, tungsten, tantalum nitride, tungsten nitride or any combination of two or more of these conductors.
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